FIELD: growing crystals; measurement of crystal diameter and level of melt in center of crucible and in crystal forming zone.
SUBSTANCE: proposed method includes measurement of level of melt in crucible by means of level sensor at selected distance from its axis of rotation, measurement of crystal diameter by means of optical system; then, image of boundary between crystal and melt is formed and coordinates of points are determined in this image; crystal diameter is determined by coordinates thus obtained; then, level of melt is measured at least one more point; angular velocity and level of melt at required distance from axis of rotation are calculated by results of measurements of melt levels, at boundary of crystal and melt inclusive and crystal diameter is calculated for this level. Proposed method makes it possible to determined level of melt directly in seeding zone (at absence of crystal) or in crystal forming zone, thus excluding error of measurement of crystal diameter and making it possible to control level of melt directly in crystal forming zone.
EFFECT: enhanced efficiency.
2 dwg
