FIELD: production of semiconductor materials. SUBSTANCE: control of melt level in crucible is performed by means of video camera which is placed at angle relative to vertical. Angle between vertical and beam passing through focus of optical system of video camera and center of circumference formed by crystal being grown at boundary with melt is determined by continuous video image. Distance between video camera and plane of melt is calculated according to said angle and crucible with melt is raised to required level. EFFECT: simplification of process; enhanced accuracy of control of melt level. 5 dwg, 1 ex
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