METHOD OF DETERMINING ANGLE OF GROWTH OF THREAD-LIKE CRYSTALS OF SEMICONDUCTORS Russian patent published in 1998 - IPC

Abstract RU 2111293 C1

FIELD: crystal growing. SUBSTANCE: invention aims at determining angle of growth - basic crystallization parameter when growing thread-like crystals. Task is solved by creating, in the course of growing, initial cone-like sector of the basis of crystal and determining angle of growth from the formula: $$$ where $$$ is initial radius of crystal basis, $$$ angle of growth, and r final radius of crystal basis. EFFECT: facilitated growing process. 1 dwg

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RU 2 111 293 C1

Authors

Nebol'Sin V.A.

Shchetinin A.A.

Sushko T.I.

Boldyrev P.Ju.

Dates

1998-05-20—Published

1996-05-30—Filed