LOW-NOISE WIDE-BAND CURRENT AMPLIFIER Russian patent published in 2001 - IPC

Abstract RU 2176850 C1

FIELD: electronics, measurement technology, automatics, pre-amplifier stages of devices of linear current amplification. SUBSTANCE: amplifier includes input and output push-pull stages based on MOS transistors 1-4 having different structures, common gate, common source, current sources placed on MOS transistors 5, 6 and resistors 11-22. EFFECT: reduced input capacitance and noise. 1 dwg

Similar patents RU2176850C1

Title Year Author Number
LOW-NOISE BROAD-BAND CURRENT AMPLIFIER 2000
  • Oleksenko V.V.
  • Kolesnikov A.P.
RU2178235C1
UNIVERSAL BRIDGE INVERTING ADDER 2007
  • Oleksenko Viktor Viktorovich
RU2331105C1
LOW-NOISE CRYSTAL OSCILLATOR WITH AUTOMATIC GAIN CONTROL 2012
  • Golubev Aleksej Valer'Evich
  • Posadskij Viktor Nikolaevich
  • Grigor'Ev Dmitrij Vladimirovich
RU2498498C1
LOW-NOISE HIGH-LINEARITY CURRENT STABILISER 2009
RU2400798C1
BROADBAND DIFFERENTIAL AMPLIFIER WITH CORRECTION DEVICE OF ELECTROTHERMAL COUPLING IN BIPOLAR TRANSISTORS 2011
  • Adamov Jurij Fedorovich
  • Gorshkova Natal'Ja Mikhajlovna
  • Stempkovskij Aleksandr Leonidovich
RU2462813C1
PULSE SIGNAL GENERATOR 1994
  • An. V.I.(Ru)
  • Kolesnikov Ju.Ju.(Ru)
RU2114500C1
HIGH-FREQUENCY WIDEBAND AMPLIFIER ON MOS TRANSISTORS 2010
  • Korotkov Aleksandr Stanislavovich
  • Balashov Evgenij Vladimirovich
RU2426220C1
GENERATOR 2012
  • Toporov Aleksandr Vladimirovich
  • Vanin Aleksej Valer'Evich
  • Vereshchagin Aleksandr Ivanovich
  • Kolesnikov Sergej Vasil'Evich
RU2504892C1
AMPLIFIER 0
  • Syritso Aleksandr Petrovich
SU1818678A1
OPERATIONAL AMPLIFIERS BASED ON CMOS TRANSISTORS 0
  • Popov Valentin Petrovich
  • Ryzhov Valentin Alekseevich
  • Ivanisov Leonid Terentevich
SU1676065A1

RU 2 176 850 C1

Authors

Oleksenko V.V.

Kolesnikov A.P.

Dates

2001-12-10Published

2000-10-20Filed