HIGH-FREQUENCY WIDEBAND AMPLIFIER ON MOS TRANSISTORS Russian patent published in 2011 - IPC H03F3/189 

FIELD: radio engineering.

SUBSTANCE: high-frequency wideband amplifier (WA) has a first MOS transistor, with a matching inductor and input coupling capacitor connected in series between the gate of the transistor and the input of the WA. A first resistor is connected between the gate of the first MOS transistor and the first bias voltage source. A feedback inductor is connected between the source of the first MOS transistor and a common node. A second MOS transistor is connected by its source to the drain of the first MOS transistor, by the gate to the first power supply and by the drain to the first power supply through a second resistor and a load inductor connected in series, wherein the connection node of the first power supply is connected to the load inductor, and the gate of a third MOS transistor. The drain of the third MOS transistor is connected to the second power supply and the source is connected to an output amplifier through an output coupling transistor and the drain of a fourth MOS amplifier. The gate of the fourth MOS transistor is connected to a second bias voltage source and the source is connected to the common node. A third resistor is connected by one lead to the drain of the second MOS transistor and by the other to the first plate of the feedback capacitor. The second plate of the feedback capacitor is connected to the connection node of the input coupling capacitor and the matching inductor, wherein the matching inductor is connected to the gate of the first MOS transistor.

EFFECT: wider operating frequency band of the amplifier.

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