PULSE SIGNAL GENERATOR Russian patent published in 1998 - IPC

FIELD: electronics, optical laser communication. SUBSTANCE: device has first and second powerful field-effect transistors of same type. Gate of first transistor serves as device input and is connected to first plate of first capacitor. Source of first transistor is connected to common line and first terminal of load. Drain is connected to second terminal of load, source of second transistor and through second capacitor to first terminal of first resistor, which is connected through direct diode to power supply line and drain of second transistor. In addition device has bipolar transistor, which base is connected to first terminal of second resistor. Collector of bipolar transistor and common line are connected by parallel circuit of third resistor and inductance coil. Load is designed as parallel fourth resistor and third capacitor. Emitter of bipolar transistor is connected to first terminal of first resistor. Second terminal is connected to base of bipolar transistor, which is type is opposite to type of first and second field-effect transistors. Second plate of first capacitor is connected to second terminal of second resistor. Gate of second field-effect transistor is connected to collector of bipolar transistor. EFFECT: increased functional capabilities. 2 dwg