FIELD: polymer materials. SUBSTANCE: invention provides composition containing specific alkoxysilane, specific organic polymer, and solvent for both indicated components, said solvent containing at least one solvent constituent selected from group composed of organic solvents containing amide and ester bonds. Thin film from composite silicon dioxide/organic polymer is manufactured by method including: formation of thin film from composition of invention; hydrolysis followed by hydration condensation with respect to alkoxysilane to induce gelation of the latter in thin film; and drying removal of residual solvent. When organic polymer is removed from thin film manufactured from alkoxysilane/organic polymer composition, one obtains thin porous silicon dioxide film. Films of invention are characterized by dielectric constant suitable for insulating layers used for multilevel interconnecting path in a semiconductor device. Film is manufactured in the course of conventional manufacture of semiconductor device. EFFECT: simplified film manufacture procedure. _
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