METHOD OF GROWING FILAMENTARY CRYSTALS Russian patent published in 2002 - IPC

FIELD: growing crystals for semiconductor materials technology. SUBSTANCE: proposed method consists in growing crystals on material of plates in chamber filled with working gas in field of action of diffraction opposing fields from roentgen radiators whose radiation passes to chamber through stack of plate mounted on end faces of chamber with spirals of thermal heater mounted inside plate stack. EFFECT: facilitated process of growing crystals; possibility of obtaining various crystalline substances by changing material of plates and gas in area of diffraction fields of P-radiation. 2 dwg