CRYSTAL GROWING DEVICE Russian patent published in 2002 - IPC

FIELD: growing of refractory crystals by Czochralski method. SUBSTANCE: device for growing crystals by Czochralski method includes hydrodynamic insert placed inside melt in crucible and having outer and inner portions; curvilinear ducts having in their lower portions annular gap between said portions. Device provides condition for sustaining in crucible natural convection converted to forced convection in order to equalize temperature in crucible without increasing rate of crystal growing in crucible, to control contour of crystallization front and to eliminate deformation of grown crystal. EFFECT: enhanced quality of grown crystals. 5 cl, 5 dwg