CRYSTAL GROWING APPARATUS Russian patent published in 2001 - IPC

FIELD: growing of optical crystals by Czochralsky process. SUBSTANCE: apparatus includes crucible with heater, seed holder, two ceramic screens embracing crucible with heater and mutually separated by transparent heat resistant insert placed in gap between lower portion of upper screen and upper portion of lower screen. Gap size is selected according to predetermined relation in such a way that to provide high axial temperature gradient in zone of crystallization front even at changing melt level due to reduced irradiation density along height on crystal surface after placing transparent heat resistant insert in gap between ceramic screens in zone of crystallization front. It provides stable and reproducible process for growing homogeneous crystals with low heat conductivity such as optical crystals. EFFECT: simplified manufacture and maintenance of apparatus. 2 cl, 3 dwg