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2 209 860

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C1

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IPC

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Application

2001134296/12, 2000-05-22

(24)

Start date

2000-05-22

(22)

Actual filing date

2000-05-22

(45)

Published

2003-08-10

(72)

Inventor

Sasaki TakamotoMori JusukeJoshimura Masashi

(73)

Holder

Dzhapehn Sajens Ehnd Teknolodzhi Korporejshn

METHOD AND DEVICE FOR GROWING HIGH-QUALITY MONOCRYSTAL Russian patent published in 2003 - IPC

Abstract RU 2209860 C1

FIELD: production of crystals . SUBSTANCE: growing monocrystal is performed by bringing seed crystal 4 in contact with melt 2 of raw material molten in crucible 1 where element 5 made in form of blade or partition is located; monocrystal is grown by drawing it from melt 2 of raw materials during rotation of crucible 1. EFFECT: enhanced efficiency; improved characteristics of crystal. 12 cl, 7 dwg

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RU 2 209 860 C1

Authors

Sasaki Takamoto

Mori Jusuke

Joshimura Masashi

Dates

2003-08-10—Published

2000-05-22—Filed

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