METHOD AND DEVICE FOR SAPPHIRE MONOCRYSTAL GROWTH Russian patent published in 2014 - IPC C30B11/02 C30B29/20 

FIELD: process engineering.

SUBSTANCE: invention relates to production of sapphire monocrystals used for production of blue or white LEDs. This device comprises kiln 10 for heating to temperature above sapphire debris fusion and insulating from ambient air. Crucible 20 is arranged in sais kiln to fuse sapphire debris therein and to allow monocrystal growth from seed crystal 51 in crucible 20. Heater 30 is arranged outside said crucible 20 to fuse sapphire debris. Coolers 40 are arranged at crucible 20 bottom to prevent a complete fusion of seed crystal 51. Note here that heaters 30 is composed by several separate heaters controlled independently by temperature gages, power controllers and temperature control units so that uniform temperature inside crucible in horizontal direction is maintained. Said heater 30 can comprises several lateral heaters 32 arranged on both sides of crucible 20, nearby its outer walls, each being connected with appropriate electrode 31.Besides, it comprises connection heater 33 arranged at top parts of heaters 32 to interconnected lateral heaters so that vertical temperature gradient is created and quantity of electrode is decreased.

EFFECT: high-quality long monocrystals grown in axis c from seed crystal.

11 cl, 4 dwg, 2 ex