METHOD OF PREPARING CHARGE FOR GROWING LANTHANUM-GALLIUM SILICATE MONOCRYSTALS Russian patent published in 2000 - IPC

FIELD: crystal growing. SUBSTANCE: method includes charging into crucible preliminarily synthesized material corresponding to composition La₃Ga₅SiO₁₄ and creating protective atmosphere. Material is then melted and rotating oriented seeding material is brought into contact with the surface of melt, after which oriented crystal is drawn from melt. According to invention, addition of seed is preceded by allowing melt to stand for 30-32 h, protective atmosphere consists of argon of nitrogen mixture with 1-5 vol % oxygen added at total pressure 1.10-1.80 atm, and seed material is oriented lanthanum-gallium silicate crystal with orientation selected from <01.1 > + / - 3 deg, <02.3 > + / - 7 deg. EFFECT: enabled preparation of monocrystals at least 80 mm in diameter weighing more than 2 kg. 3 cl