MANUFACTURING DEVICE FOR MONOCRYSTALLINE ALUMINIUM NITRIDE, MANUFACTURING METHOD OF MONOCRYSTALLINE ALUMINIUM NITRIDE, AND MONOCRYSTALLINE ALUMINIUM NITRIDE Russian patent published in 2013 - IPC C30B23/00 C30B29/38 

FIELD:

SUBSTANCE: invention refers to the method for obtaining monocrystalline aluminium nitride that is included in composition of light-emitting diodes and laser elements Device includes crucible 9, in inner part of which there contained is initial aluminium nitride 11 and inoculating crystal 12 placed so that it can be located opposite initial aluminium nitride; at that, crucible 9 consists of internal crucible 2 with initial aluminium nitride 11 and inoculating crystal 12 inside it; at that, internal crucible is corrosion-resistant to sublimate gas of initial aluminium nitride and includes a single metal housing having ionic radius that exceeds ionic radius of aluminium, or contains metal nitride; and external crucible 4 made from boron nitride that covers internal crucible 2 In addition, crucible 9 can contain graphite crucible 6 covering external crucible 4.

EFFECT: proposed invention allows obtaining aluminium nitride of high level of cleanliness (with carbon concentration of not more than 10 parts by weight).

11 cl, 2 dwg, 1 tbl, 4 ex.