SEMICONDUCTOR MEMORY DEVICE WITH NONVOLATILE MEMORY LOCATIONS BUILT AROUND TWO TRANSISTORS Russian patent published in 2003 - IPC

Abstract RU 2213380 C2

FIELD: semiconductor memory devices. SUBSTANCE: decide has at least one memory location incorporating n-channel selective transistor, n-channel memory transistor, p-channel junction transistor, vertical and horizontal buses. EFFECT: faultless programming of semiconductor memory device. 6 cl, 2 dwg, 2 tbl

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RU 2 213 380 C2

Authors

Pokrandt Vol'Fgang

Sedlak Khol'Ger

Fimann Khans-Khajnrikh

Dates

2003-09-27—Published

1998-07-14—Filed