CONTROL CIRCUIT FOR NONVOLATILE MEMORY DEVICE Russian patent published in 2004 - IPC

Abstract RU 2221286 C2

FIELD: computer engineering. SUBSTANCE: proposed control circuit for nonvolatile memory devices that can be used in critical-to-surface raster memory circuits has signal level conversion circuit, input circuit, and interlocking circuit. EFFECT: enhanced stability of output control voltages even in high-voltage region. 2 cl, 5 dwg

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RU 2 221 286 C2

Authors

Tsettler Tomas

Dates

2004-01-10Published

1998-06-08Filed