NONVOLATILE MEMORY LOCATION Russian patent published in 2003 - IPC

Abstract RU 2215337 C2

FIELD: automatic control and computer engineering. SUBSTANCE: novelty is introduction of capacitor in memory location to protect it against noise during recording and reading. Nonvolatile memory location has N wound magnetic cores with rectangular hysteresis loop, two logic elements, switching unit, switch, three resistors, capacitor, as well as power, reset, polling, information, control, input, and address buses. EFFECT: enhanced noise immunity of nonvolatile memory location. 2 cl, 1 dwg

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RU 2 215 337 C2

Authors

Egorov L.B.

Tsetlin I.V.

Dates

2003-10-27Published

1999-11-26Filed