FIELD: electrical and radio engineering. SUBSTANCE: technical result of invention lies in increase of quantum yield of photoelectrons to 60- 70% in maximum in visible region of spectrum. To achieve this technical result layer of semiconductor with p-n junction deposited on surface of glass flask of photoelectric multiplier facing vacuum was implanted with nanoparticles of metal with linear dimensions under 100 nm homogeneously distributed over its surface with concentration of mentioned nanoparticles in layer amounting to (1÷5)10-2 volume fractions. EFFECT: increased quantum yield of photoelectrons. 3 dwg
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