A REACTOR FOR PRODUCTION OF WIDE PLATES OF INITIAL POLYCRYSTALLINE SILICON Russian patent published in 2004 - IPC

FIELD: production of semi-conductive materials. SUBSTANCE: the invention presents a reactor for production of wide plates of initial polycrystalline silicon by settling on the heated substrates (bases) in the process of hydrogenous reduction of chlorosilanes or during decomposition of the gas phase of monosilane. The reactor for production of the initial polycrystalline silicon in the process of the hydrogenous reduction of chlorosilanes or decomposition of monosilanes contains: a vertical water- cooled body made of the stainless steel located on a water-cooled steel plate, through which the insulated current leads with holders for fixation of substrates for silicon settling are passing; the nozzles used for feeding of a vapor of monosilane or a vapor-gas mixture of chlorosilanes with hydrogen in the space between rows of substrates; pipe stubs used for feeding nitrogen, creation of vacuum and vapor-gas mixture discharge. The current leads are made in the form of "r" and are of different height. In the capacity of the substrates they use the broad flat fabric substrates made of a composite material with specific resistance in the interval from 0.01 up to 10 hm sm, that are neutral to the stream of vapor of monosilane or the vapor-gas mixture of chlorosilanes with hydrogen. They are fixed in the holders of the current leads vertically in the parallel rows in direction of filaments of the substrates. The holders are made in the form of semicylinders with horizontal planes, on which pairs of the wide flat substrates are fixed, the substrates in the pairs are spaced from each other by value of no less than two thickness of the settled bed of silicon. EFFECT: the invention allows to increase durability of the reactor, strength of the substrates and the speed of the process. 2 dwg, 2 ex