FACILITY FOR RECEIVING OF POLYCRYSTAL RODS Russian patent published in 2009 - IPC C30B28/14 C30B29/06 C01B33/35 

FIELD: metallurgy, crystals.

SUBSTANCE: invention relates to manufacturing of semiconductive materials, particularly to receiving of initial polycrystalline silicon by means of sedimentation on heated basis during the process of hydrogenous renewal of chlorine orsylan. Facility contains sectional reactor 1, top resting part 2 of which with located on its top wall current lead 6 with attachment fitting 7 of basis 8, 9 is installed on vertical strut 3 with formation under the reactor of materials handling zone and separated from top moving part by horizontal-split, bottom moving part of reactor, separated by additional horizontal slot on bottom-most portion 5 and shell 4, container with sockets, implemented according to location of current lead, and its orientation facility in materials handling area, elevator with facilities for cohesion with bottom part of reactor and with container, power-supply and components feeding system. Into bottom part 5 and shell 4 of reactor split frame 1 there are installed cylindrical frames 10, 11 with demountable reflecting baffles, located coaxial with peripheral basis along the full length, and demountable reflecting baffles are implemented with concavity, directed to peripheral basis.

EFFECT: increasing of quality of multicrystalline silicon rods and plant capacity.

3 cl, 3 dwg