FIELD: metallurgy.
SUBSTANCE: procedure is performed in reactor and consists in hydrogen reduction of mixture of chlorine-silane with thermal decomposition of silane, in sedimentation to required thickness of layer of poly-crystal silicon on core base heated to 1100-1200°C. Also, poly-crystal silicon is settled first on the silicon core for obtaining a layer of thickness about 2 mm. Further, surface of this layer is polarised by application of positive potential 8-10 V to it relative to the base and a loose layer of polycrystalline silicon of 1.5-2.0 mm thickness is settled, where upon polarisation potential is switched off and sedimentation of polycrystalline silicon is proceeded for obtaining a layer of required thickness.
EFFECT: simplified process of removal of layer of polycrystalline silicon settled on core base.
1 dwg
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