SWITCHING DEVICE Russian patent published in 2004 - IPC

FIELD: radio engineering; miscellaneous transceivers, limiters, high- power switching and phase-shifting microwave devices. SUBSTANCE: switching device has rectangular waveguide section with semiconductor component. The latter is installed between wide walls of rectangular waveguide section having smaller cross- sectional area on narrow wall formed between two waveguide transitions; partitions provided at installation point of semiconductor component are disposed in sectional area along narrow walls, partition-to-partition distance being found from condition , where d_sc is cross-section of semiconductor component (diameter of pin diode) having dielectric constant ε, λ is wavelength. Semiconductor component can be installed in center of lengthwise section of waveguide having smaller cross-sectional area along narrow wall formed between two symmetrical waveguide transitions. Semiconductor component can be mounted on longitudinal axis of waveguide and partitions can be arranged symmetrically relative to semiconductor component. The latter can be installed vertically between wide walls of rectangular waveguide section. EFFECT: reduced loss, enlarged frequency band of device. 4 cl, 2 dwg