INSTALLATION FOR POLYCRYSTALLINE SILICON PRODUCTION Russian patent published in 2004 - IPC

FIELD: technology of semi-conductive materials; production of polycrystalline silicon rods. SUBSTANCE: the invention presents an installation for production of polycrystalline silicon. The installation is intended for evaporation and production of steam-gaseous mixtures and may be used in technology of semi- conductive materials production, in particular in production of polycrystalline silicon rods. Installation for production of polycrystalline silicon contains: a reactor (1) of hydrogen reduction of silicon, in which polycrystalline silicon rods (2) are grown, a hydrogen supply trunk (3) and a liquid trichlorosilane supply trunk (4), connected to the corresponding inlets of the evaporator - mixer (5), outlet of which is linked by a steam-gaseous mixture (SGM) trunk (6) to the reactor (1) inlet, a waste SGM trunk (7) linked to the reactor (1) outlet and containing SGM cooler (8). THE waste SGM trunk (7) additionally includes a preliminary cooler (9) placed between the reactor (1) and cooler (8) and a hydrogen heater (10) mounted between them. The heater (10) is made in the form of a contactless heat exchanger with a separating wall (11). EFFECT: reduced a heat-transfer agent and cold water consumption, simplified construction. 2 cl, 1 dwg