POLYCRYSTALLINE SILICON PRODUCING DEVICE Russian patent published in 2008 - IPC C01B33/03 

FIELD: mechanics.

SUBSTANCE: polycrystalline silicon producing device incorporates silicon hydrogen-reduction reactor 1, branch pipe 2 removing waste vapor-gas mix from the said reactor communicating, via pipe 3, with cooler 4. Cylindrical barrel with branch pipe is attached to the bottom of nozzle arranged in branch pipe 2. The said barrel inside is furnished with holes. A threaded bush is arranged on the barrel top, a taper inlet manifold with a cylindrical mixing chamber being attached to the said bush. The mixing chamber accommodates a replaceable taper diffuser with cylindrical outlet branch pipe.

EFFECT: higher quality of polycrystalline silicon rods, lower production costs, higher efficiency and degree of silicon extraction from chlorosilanes.

2 cl, 2 dwg