FIELD: study of thermomagnetic effects at super-high pressures.
SUBSTANCE: proposed method includes securing semiconductor specimen with combined longitudinal and transversal contacts between two plates in high-pressure chamber placed in magnetic field. Temperature gradient is created in specimen and pressure is exerted on specimen. Chamber is turned in magnetic field around its axis and positions corresponding to even and odd thermoelectric signals relative to magnetic field are found; then, longitudinal and transversal thermomagnetic effected are measured in these positions. Nernst-Ettingshausen effect is measured as thermomagnetic effect. Axis of chamber along which temperature gradient is created is positioned perpendicularly relative to magnetic field. Plates are made in form of anvils manufactured from synthetic diamond. Contacts are hold-down in construction. Measurements are performed in non-stationary mode. Positions corresponding to even and odd thermoelectric signals relative to magnetic field are found by performing measurements in different positions of chamber at change of magnetic induction.
EFFECT: enhanced efficiency of measurements at pressure up to 30 hPa.
6 cl, 6 dwg
