DEVICE FOR GROWING MONOCRYSTALS OF SAPPHIRE Russian patent published in 2004 - IPC

Abstract RU 2232832 C1

FIELD: non-ferrous metallurgy.

SUBSTANCE: the invention presents a device for growing monocrystals of sapphire and is dealt with the field of monocrystals growing from melts and may be used for development of devices for growing monocrystals of sapphire. The substance of the invention provides, that the device for growing monocrystals of the sapphire contains mounted in a vacuum chamber a screen, a heater, a seed crystal holder with a fixed seed in it, a king-pot with a cover and a form-shaper, a system to control a raising speed of a seed crystal and the heater power. On the cover of the chamber there is a fixed bin made in the form of a cylinder with a cone-shaped upper and lower parts. The volume of the cylinder is equal to the volume of the king-pot. The lower part contains a locking valve made in the form of a truncated cone. On the upper part of the bin there is a silphon, which is connected with the locking valve through a rod provided with the mechanism of manual or automatic motion. The lower part of the bin is hermetically inserted into a pipe used for delivery of the initial powdery material and is sunk in the king-pot through an aperture in the king-pot cover. The lower end of the pipe is located below an edge of the king-pot at the depth corresponding to 0.20-0.25 of the king-pot height, and a space between axes of the pipe the king-pot makes 0.20-0.30 of the king-pot diameter. The technical result of the invention is the capability to process the low-cost powdery aluminum oxide of an alpha modification made in the form of a powder, reduction of power inputs used for melting-down of the initial raw material feed stock and an increase of productivity due to enlarging of a melt volume within the limits of one process.

EFFECT: capability to process the low-cost powdery aluminum oxide of an alpha modification, reduction of power inputs used for the initial raw material melting-down, increased productivity.

1 dwg

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RU 2 232 832 C1

Authors

Bletskan N.I.

Pekar' Jaroslav Mikhajlovich

Dates

2004-07-20Published

2003-05-30Filed