FIELD: growing sapphire mono-crystals from melts by crystallization. SUBSTANCE: proposed device includes the following components mounted in vacuum chamber: crucible with mold in form of rectangular prism, heater, seed holder, reflector, support for crucible, thermal shields and seed crystal raising rate and power control systems; mold is made in form of sectors formed by partition in form of diaphragm which is located perpendicularly relative to end faces of mold or by partitions made in form of membranes located perpendicularly relative to one another and end faces of mold. EFFECT: increased rate of crystal growth at retained quality; reduced losses per mass; possibility of obtaining crystals of required sizes. 9 cl, 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| DEVICE FOR GROWING OF THE RECTANGULAR MONOCRYSTALS OF SAPPHIRE | 2005 |
|
RU2310020C2 |
| DEVICE FOR GROWING SAPPHIRE MONO-CRYSTALS | 2003 |
|
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|
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RU2316621C2 |
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|
RU2232832C1 |
| APPARATUS FOR GROWING SINGLE CRYSTALS OF HIGH-MELTING MATERIALS | 0 |
|
SU1132606A1 |
| DEVICE FOR MONOCRYSTALS GROWING FROM MELT | 2003 |
|
RU2222644C1 |
| DEVICE FOR GROWING OF THE PROFILED MONOCRYSTALS | 2003 |
|
RU2230839C1 |
