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Application

98114540/12, 1998-07-15

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Start date

1998-07-15

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Actual filing date

1998-07-15

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Published

2000-07-10

(72)

Inventor

Buzanov O.A.(Ru)

(73)

Holder

Rafida Developments Inkorporejted

METHOD OF GROWING COMPLEX RARE-EARTH GALLIUM-CONTAINING OXIDES Russian patent published in 2000 - IPC

Abstract RU 2152462 C1

FIELD: crystal growing. SUBSTANCE: crystals are grown on oriented seed from melt of compound described by formula La3Ga5,5Me0,5Oi4 wherein M is tantalum or niobium. Crystals showing piezoelectric effect are further cut into plates with minimum loss of material. EFFECT: simplified procedure. 2 cl

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RU 2 152 462 C1

Authors

Buzanov O.A.(Ru)

Dates

2000-07-10—Published

1998-07-15—Filed

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