STRAIN TRANSFORMER OF PRESSURE Russian patent published in 2007 - IPC G01L9/04 

FIELD: electronics.

SUBSTANCE: strain transformer for pressure contains two-layered resilient element in form of metallic membrane, rigidly connected to dielectric substance, positioned on which are strain resistors, connected in bridge circuit. Strain resistors are made of polycrystalline silicon, while dielectric substrate is made of aluminum oxide, both of monocrystalline and non-monocrystalline structure.

EFFECT: increased temperature and time stability of strain transformer, and decreased costs of same.

3 cl, 1 dwg