MONOCRYSTAL PRODUCING METHOD Russian patent published in 2007 - IPC C30B15/20 C30B15/12 

FIELD: production of mono-crystals of dielectrics and semiconductors by oriented crystallization at drawing ingot upwards from melts, possibly manufacture of semiconductor and opto-electric mono-crystalline materials.

SUBSTANCE: method comprises steps of drawing mono-crystal from inner crucible having opening or openings and arranged inside outer crucible; setting initial compositions of melts in inner and outer crucibles; as crystal is drawn, moving inner crucible relative to outer one with use of computer at rate determined according to formula: v =(m-1)(dm_c/dt)/(ρ_L x S_in)+(dm_c/dt)/(ρ_L x S_o) where v - motion speed of inner crucible relative to outer one, "+" - downwards, "-" - upwards; m = dm_f /dm_c - replenishing parameter; m_c - crystal mass; m_f - mass of melt fed from outer crucible into inner crucible; t - time; ρ_L - melt density; S_in - surface area of cross section of inner crucible; S_o - surface area of cross section of outer crucible.

EFFECT: possibility for controlling composition of mono-crystal and for creating preset lengthwise concentration profile of components of solid solution.

6 cl, 1 ex, 3 dwg