METHOD FOR CD1-XZNXTE SINGLE CRYSTALS GROWING, WHERE 0≤X≤1, FOR INOCULATION AT HIGH PRESSURE OF INERT GAS Russian patent published in 2017 - IPC C30B13/18 C30B15/08 C30B29/48 C30B15/14 C30B15/22 C30B15/04 C30B15/10 C30B33/02 

FIELD: chemistry.

SUBSTANCE: invention relates to melt growing of Cd_1-xZn_xTe (CZT) single crystals, where 0≤x≤1 for inoculation, by the OTF-method. The CZT crystals growing method is implemented under high inert gas pressure, under conditions of an axial heat flow near the crystallisation front, by the OTF method, using a background heater and immersed heater - OTF heater 6, by drawing crucible 1 with the melt into the cold zone ν at a rate for different initial compositions of charge 5, 7 in the crystallisation zone W₁ with a melt layer thickness h, and in the make-up zone W₂, as well as using probe 3 to control the melting point of the charge in the crystallisation zone W₁. To obtain macro- and microhomogeneous CZT single crystals of a given crystallographic orientation, a single-crystal Cd_1-xZn_xTe inoculation of the desired crystallographic orientation 2 is installed at the bottom of crucible 1, probe 3 is placed in the center of inoculation 2 and charge 5 is placed, the composition of which ensures, with allowance for the partial melting of inoculation 2 and in accordance with the phase diagram of the CdZnTe system, the growth of the Cd_1-xZn_xTe single crystal at a given thickness of the melt layer h in the crystallization zone W₁, then OTF-heater 6 is installed, charge 7 of a composition equal to the composition of inoculation 2 is placed above OTF-heater 6, forming the make-up zone W₂, then the OTF crystalliser with crucible 1, inoculation 2, charge 5, 7 and OTF-heater 6 with probe 3 are placed in the growth furnace, the furnace is filled with an inert gas and the OTF-crystalliser is heated in the furnace in a vertical temperature gradient at a rate of 10-50 deg/hr until the top of inoculation 2 begins to melt, and then probe 3 is lowered to contact the non-melted part of inoculation 2, then heating is stopped and probe 3 is moved up to the level of the OTP-heater 6 bottom, the system is kept for 1-5 hours, controlling the melting rate of inoculation 2 by probe 3, after which the crystal begins to grow by pulling crucible 1 down at a rate of 0.1-5 mm/hr relative to stationary OTF-heater 6 with probe 3. When crystals are grown using a probe for controlling the inoculation melting point, it is possible to increase the yield percentage, obtain single crystals of a given crystallographic direction, and improve the quality due to monocrystallinity and resulting absence of blocks and twins. The average density of etch pits was 5^* 103 cm^-2 before crystal annealing. 89-92% of the crystal volume is single crystal, i.e. without blocks and twins, deviations from the specified composition in the volume were 0.5 at %.

EFFECT: grown CZT crystals are characterized by a high degree of macro- and micro-homogeneity.

13 cl, 1 dwg