METHOD AND APPARATUS FOR DRAWING CRYSTALS Russian patent published in 1994 - IPC

FIELD: crystal growing for making parts of gas turbine engines. SUBSTANCE: crucible for working melt is being loaded by a charge with alloying additives and flux. A crucible for making up material and a hopper for powdered making up material are also being loaded by charges. Air is being exhausted chambers with the crucibles; these chambers are being filled by compressed gas with pressure more, than an elasticity of the most volatile component of the charge; then the charge is being melt in the crucibles. A level of the making up solution is being set for providing closing of a weir up opening of a connecting pipeline by a float valve. The chamber with the working melt is being vacuumized, an optical system is being aligned to the level of the working melt in the crucible; a seed is being brought to contact with the melt for drawing a crystal. Volume of the melts in the crucibles is being sustained automatically. EFFECT: uniform gas inclusion free semiconductor crystals and oxide ceramics. 3 cl, 4 cl, 3 dwg