METHOD OF GROWING CdZnTe, WHERE 0≤х≤1 Russian patent published in 2008 - IPC C30B13/18 C30B29/48 

FIELD: technological processes.

SUBSTANCE: invention is related to technology of growing single crystals Cd_1-xZn_XTe, where 0≤x≤1 from melt under high pressure of inertial gas. Method is implemented by means of pulling crucible with melt in cold zone with rate v, at that at first melt is overheated and cured, after that crystals growth is carried out in crucible (1) with temperature detectors (8,9), which are installed on the bottom and side wall of crucible, under conditions of axial thermal flow with temperature gradient gradT_ax next to crystallisation front - by OTF method, with application of heater (3) or partition made of highly heat-conducting material that are immersed in melt, with temperature detectors (6,7) installed inside with presence of radial temperature gradient gradT_rad along bottom of heater or partition, which are installed with gap δ from crucible wall, at that heater or partition divide melt into two zones W₁ and W₂, in which charge of different composition is placed, at that in the process of growth thickness of melt layer h is measured in zone W₁. Method provides the following: 1) control of composition in longitudinal direction by creation of make-up zone, due to division of melt into two zones with the help of heater immersed in melt, 2) control of composition in transverse direction by means of control with the help of heater with crystallisation front shape, 3) control of melt overheating value with the help of temperature detectors in heater, 4) possibility to prepare low-dislocation crystals by creation of one-dimensional thermal field next to crystallisation front, 5) increase of micro-homogeneity of crystals by creation of feeble laminar flows close to interphase surface, 6) production of crystals with larger dimensions (with diameter of up to 100-150 mm). Grown crystals are characterised with high degree of macro- and micro-homogeneity (deviations from preset composition in volume make <0.5 at %, the average density of etching pits - 5*10³ cm^-2 without annealing).

EFFECT: preparation of single crystals with improved characteristics.

19 cl, 2 dwg