FIELD: devices and methods for determining orientation of crystallographic plane relatively to crystal surface, and also device and method for cutting mono-crystal in cutting machine.
SUBSTANCE: in accordance to method, angle, formed between crystal surface being measured and base axis, is measured, and angle, formed between crystallographic surface and base axis, and measured angles are subtracted. Then, in device for wire sawing, containing X-Y adjustment device, required correction is performed by measuring orientation and at the same time crystal is moved in horizontal and vertical positions. As a result, additional degree of freedom remains for rotation of crystal in cutting plane to achieve cut, unaffected by forces, perpendicular to feeding direction and wire direction, so that tool deflection is absent, or cutting forces are minimal.
EFFECT: increased cutting precision, and simultaneously increased output of plates during mono-crystal cutting.
4 cl, 12 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD AND APPARATUS FOR CUTTING MONOCRYSTALS, ALIGNING DEVICE AND TESTING METHOD FOR DETERMINING CRYSTAL ORIENTATION | 2001 |
|
RU2251598C2 |
MONOCRYSTAL ORIENTING CUTTING UNIT | 0 |
|
SU1766685A1 |
WAY AND DEVICE FOR MEASUREMENT, ORIENTATION AND FIXING OF AT LEAST ONE MONOCRYSTAL | 2005 |
|
RU2365905C2 |
METHOD OF PREPARING SPECIMENS FOR INVESTIGATING CRYSTAL STRUCTURE THEREOF | 0 |
|
SU977990A1 |
DIFFRACTOMETRIC METHOD OF MONOCRYSTAL ORIENTATION DETERMINATION | 0 |
|
SU890179A1 |
METHOD OF MAKING SEED CRYSTALS | 1990 |
|
RU1786762C |
DIFFRACTION-MEASURING METHOD FOR DETECTION OF CRYSTAL-AXES ORIENTATION IN BIG SINGLE-CRYSTAL OF KNOWN STRUCTURE | 1993 |
|
RU2085917C1 |
METHOD FOR CUTTING THREE-DIMENSIONAL SILICON CARBIDE CRYSTALS | 2001 |
|
RU2202135C2 |
MONOCRYSTAL ORIENTATION X-RAY DIFFRACTOMETRIC DETERMINATION METHOD | 0 |
|
SU890180A1 |
CRYSTAL ORIENTATION DETERMINATION METHOD | 0 |
|
SU890176A1 |
Authors
Dates
2007-04-10—Published
2002-06-11—Filed