METHOD FOR CUTTING THREE-DIMENSIONAL SILICON CARBIDE CRYSTALS Russian patent published in 2003 - IPC

FIELD: electronic instrumentation engineering. SUBSTANCE: method includes initiation of electric arc discharge in aqueous medium between crystal and metal electrode. In the process shading ring is built up on crystal surface before initiating electrical discharge and the latter is initiated in crystallographic direction with electrode gap measuring maximum 300 mcm. Said method provides for cutting SiC ingots of any diameter and length into wafers and for reducing concentration of cracks in vicinity of destroyed SiC layer. EFFECT: enhanced quality of silicon carbide crystal surface obtained. 2 cl, 1 dwg, 2 ex