FIELD: manufacture of semiconductor components and devices.
SUBSTANCE: method for dividing mono-crystal such as GaAs comprises steps of cutting mono-crystal at least by two portions, providing motion of cutting tool (2,3; 8,8w, 8b, 8c) relative to mono-crystal in direction of motion (V); orienting mono-crystal 1 in such a way that to arrange predetermined crystallographic direction (K) in cutting plane (T); selecting angle (ρ) between predetermined crystallographic direction (K) and motion direction (V) in such a way that to provide mutual compensation of forces acting upon cutting tool at cutting process in direction normal relative to cutting plane or providing said forces equal to predetermined value.
EFFECT: increased cutting speed, enhanced quality of wafers allowing omit further working operations of them.
16 cl, 12 dwg
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