FIELD: non-ferrous metallurgy, namely structure of aluminum cell cathode device.
SUBSTANCE: device includes lined casing, hearth and board units, socket and flange plate. Space between lining and flange plate is filled with material in the form of packing mass on base of silicon carbide having heat conductivity factor no less than 10 Wt/mK and rate of interaction with cryolite-alumina melt no more than 10 g/(m2 h). Silicon carbide is in the form of mixture containing highly concentrated binding suspension prepared by wet grinding method and filler. At least 70% of dispersed content of highly concentrated binding suspension of SiC are particles with size 0 - 15 micrometers.
EFFECT: lowered thermal resistance between lining and flange plate of cathode device.
3 cl, 2 dwg
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