LIGHT-EMITTING DIODE DEVICE Russian patent published in 2008 - IPC H01L33/00 

FIELD: electronic engineering.

SUBSTANCE: proposed light-emitting diode device that functions to essentially enhance axial luminous intensity while fully utilizing direct and side emission of chip at wrap angle of minimum ±90° for shaping any desired indicatrix of color or white light emission has radiation source with one or more optical-range light-emitting chips and converging lens with butt-end raster-taper system; space between emitters and lens (well) is filled with optically transparent polymerizing material. Lateral surface of lens is made in the form of aspherical mirror surface whose dimensions D_m and d_m are correlated with dimensions of butt-end raster-taper system D_RTS and d_RTS and with those of well D_w and d_w by means of definite dependencies; minimal diameter of lateral mirror surface D₀ = (0.8-1.3)D_RTS. Lens material refractive index n₂ is higher than that of well polymerizing material n₁. Emitter surface can be raised above plateau surface by d₀ = (0.1-1) mm.

EFFECT: enhanced power characteristics of device.

5 cl, 5 dwg