SEMI-BRIDGE TRANSISTOR INVERTER Russian patent published in 2008 - IPC H02M7/538 

FIELD: electricity.

SUBSTANCE: semi-bridge transistor inverter, which contains semi-bridge from two transistors, which are shunted with two reverse diodes and two condensers, which together with transistors form the bridge, which is connected with diagonal of direct current to the power supply source, and with diagonal of alternating current that is loaded onto primary winding of matching transformer, the secondary winding of which is connected through diode bridge to the load of direct current of active-inductive character. Inverter is controlled from the standard system of width-pulse regulation, which is closed by current and voltage of load. The peculiar feature consists in the fact that for linearization of external characteristics R-C circuit, which determines pulse generator frequency and accordingly the inverter frequency, is made in the form of condenser and two sequentially connected resistors, one of which is shunted with diagonal of diode bridge alternating current, the diagonal of direct current of which is connected to transistor. Transistor together with feedbacks on current and voltage of load and simple logical circuit presents analog of controlled resistor and allows to exercise automatic change over from the mode of width-pulse modulation with fixed frequency in the mode of width- and frequency-pulse modulation with increase of frequency proportionally to load current.

EFFECT: provision of linearity of external characteristics of semi-bridge transistor inverter.

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