FACILITY FOR PROFILED CRYSTAL GROWTH OF REFRECTORY COMPOUNDS Russian patent published in 2008 - IPC C30B15/34 

FIELD: metallurgy, crystal growth.

SUBSTANCE: invention concerns field of receiving profiled crystals of refrectory compounds, for instance, leucosapphire, ruby, yttrium aluminum garnet and others, growth from melt by method of Stepanov. Facility contains pot with installed in it form-builder with vertical capillary channels, at that it is outfitted by nozzle, fixed on bottom end of form-builder, enveloping it with forming of closed cavity, communicating to pot chamber by means of holes, implemented in nozzle. Nozzle can be fixed on bottom end of form-builder as with firm adherence to its side walls, as with formation of open between side walls of nozzle and form-builder. In nozzle chamber which is lower butt end of form-builder can be located filler with ability of passing of melt to the capillary channels. Filler can be implemented in the form of rods, or plates, or wires and located in chamber of nozzle as several layers.

EFFECT: receiving of crystals of higher quality, increasing of product yield and decreasing of cost price of receiving crystals.

11 cl, 4 dwg