DEVICE FOR GROWING OF THE PROFILED MONOCRYSTALS Russian patent published in 2004 - IPC

FIELD: monocrystals production.

SUBSTANCE: the invention is pertinent to production of monocrystals and to devices for monocrystals growing from melts, and may be used for production of profiled calibrated volumetric monocrystals, in particular, sapphires. Substance of the invention: the device for growing of profiled monocrystals using the a seed crystal includes: a king-pot for a melt, a heater and a form shaper located in the king-pot and made in the form of a monolithic cylinder or a prism with through level canals in its bottom part and with the dead end central and slant channels crossing the level channels. At that the central channel leads to the seed crystal, and slant channels lead to a lateral surface in the top part of the a form-shaper. The heater is made out of separate, equal length and configurations U-shaped lamellas formed from the rods made out of calibrated refractory metals and alloys and shapely bent following the form of the king-pot. The lamellas are gathered in a circle or in a section along generatrix, repeating the form of the form-shaper. For growing crystals with cubic and hexagonal lattices total amount of lamellas should be multiple to 12. The invention allows to exclude formation of micropores and small-angled structural formations, to increase productivity and to reduce amount of waste products.

EFFECT: the invention allows to exclude formation of micropores and small-angled structural formations, to increase an productivity and to reduce amount of waste products.

2 cl, 2 dwg