DEVICE FOR GROWING OF SINGLE-CRYSTAL PIPES AND METHOD OF THEIR OBTAINING Russian patent published in 2014 - IPC C30B11/00 C30B11/02 C30B11/14 C30B29/66 

FIELD: metallurgy.

SUBSTANCE: invention relates to the technology of growing of pipes from single crystals of high-melting metal oxides and their solid solutions: sapphire, aluminium-magnesium spinel, aluminium-yttric garnet, and can be used in various areas of science and engineering, where the high-tensile, inert and thermostable pipes are required. The device includes the crucible consisting of axially located, made from molybdenum the external pipe 1 and, at least, one internal pipe 2, molybdenum cover 7, fixed from above, and collet 3, located in the bottom of the crucible, on which the external 1 and internal 2 pipes and cylindrical single-crystal seed crystal 4, having, at least, one channel 5 for placing in it of internal pipe 2, are fixed. The initial mix material 6 is placed in the specified device, where it is placed between external and internal pipes of the crucible and melted in the unit of vertical unidirectional solidification at the level of isothermal curve of crystallization with the movement of the crucible up, the melt is held in the top position no less than 2 hours and crystallization is performed at the level of isothermal curve at a rate of no more than 5 mm/hour.

EFFECT: invention allows to obtain single-crystal pipes of the specified size and high quality moulds without bubbles and blocks.

5 cl, 1 dwg