FIELD: metallurgy.
SUBSTANCE: device includes melting pot 2 with molten metal 3, which is arranged in growth chamber 1 connected to an inert gas supply device, and stock 9 with seeding agent 10, which is installed above shaper 4 with annular feed capillary 5 made in it and at least one vertical channel 6 located in upper part of shaper 4; melting pot 2 is installed so that it can move vertically; in upper part of shaper 4 parallel to an end surface there is through channel 7 connected to each vertical channel 6 of shaper 4; with that, diameter of through channel 7 is at least 2.5 diameters of vertical channel 6; and in lower part of shaper 4 there is buffer cavity 8 open for melt 3 and connected to feed capillary 5.
EFFECT: obtaining long crystals with high yield ratio and with several longitudinal channels of a small diameter, including in a group growth process.
4 cl, 1 dwg, 1 tbl, 1 ex
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