METHOD OF MEASURING FLUENCE OF HIGH-SPEED NEUTRONS USING SEMICONDUCTOR DETECTOR Russian patent published in 2008 - IPC G01T3/08 

FIELD: physics.

SUBSTANCE: method involves calibration of a detector, which is in form of a simple semiconductor without p-n junctions - monocrystalline silicon, measurement of electrical resistivity of monocrystalline silicon before and after irradiation, irradiation by an unknown fluence of high-speed neutrons, determination of fluence of high-speed neutrons from the change in electrical conductivity in monocrystalline silicon due formation of radiation defects in it due to the high-speed neutrons. The fluence of high-speed neutrons is calculated from the formula: where K - is a coefficient of proportionality, which is constant for the measured spectrum of neutrons and does not depend on the initial resistivity. K is determined when calibrating the detectors. ρ₀ is the initial resistivity, which is measured before irradiating the detector, ρ - is the final resistivity, which is measured after irradiating the detector by fluence F of high-speed neutrons.

EFFECT: wide range of measured fluence of high-speed neutrons (10¹⁰-10¹⁸ cm²).

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