METHOD OF MEASURING NEUTRON FLUENCE USING DETECTOR MADE FROM SINGLE-CRYSTALLINE SILICON Russian patent published in 2010 - IPC G01T3/08 

FIELD: physics.

SUBSTANCE: invention relates to radiotechnology, as well as to operation of nuclear installations and accelerators. The method involves calibration of a detector, measurement of initial resistivity of the single-crystalline silicon, illumination with an unknown neutron fluence, annealing radiation defects in silicon generated by fast neutrons, measurement of final resistivity and determination of neutron fluence from change in conductivity in the single-crystalline silicon due to formation of a phosphorus donor impurity therein in accordance with formula: (1) where K is a coefficient of proportionality which is constant for the measured spectrum of neutrons and does not depend on initial resistivity and is determined when calibrating detectors, ρ_o is resistivity which is measured before illuminating the detector, ρ is final resistivity which is measured after illuminating the detector with a fluence F of slow neutrons and annealing radiation defects. The radiation defects are annealed at temperature below 800°C for not less than two hours.

EFFECT: method allows for using a simple semiconductor without p-n junctions as a detector of slow neutrons - n- and p-type single-crystalline silicon; wide range of measured fluence of slow neutrons from 10¹⁵ to 10¹⁸ cm^-2; single initial calibration of a detector with any initial resistance for the given spectrum of neutrons, wherein calibration does not change when using detectors with any other initial resistance.

2 cl, 1 tbl