METHOD OF MEASURING FAST NEUTRON FLUENCE WITH SEMICONDUCTOR MONOCRYSTALLINE DETECTOR Russian patent published in 2014 - IPC G01T3/08 

FIELD: physics.

SUBSTANCE: method includes calibrating a detector, measuring electrophysical parameters of the detector before and after irradiation and irradiating the detector with fast neutrons. The detector is made in form of a plate with plane-parallel base surfaces. Electrical resistance between bases of the plate is measured before and after irradiation, for which ohmic contacts are deposited on the entire surface of each base of the plate before measurements, and fast neutron fluence F is determined from the change in electrical conductivity between contacts before and after irradiation of the plate $$F=\frac{Kd}{S}(\frac{1}{R_0}-\frac{1}{R}),$$ where K is a coefficient of proportionality, which is constant for the measured neutron spectrum and does not depend on the initial electrical resistance; coefficient K is determined when calibrating the detector; d is the thickness of the plate; S is the surface area of each base of the plate; R₀, R denote the initial and final electrical resistance between ohmic contacts before and after irradiation, respectively.

EFFECT: simple and cheaper method of detecting fast neutron fluence.

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