MEHGOD OF GROWING CADMIUM TELLURIDE MONOCRYSTAL Russian patent published in 2008 - IPC C30B11/02 C30B29/48 C30B33/02 

FIELD: chemistry.

SUBSTANCE: method of manufacturing cadmium telluride monocrystal lies in loading polycrystal half-product into crucible, hermetization with further crucible vacuuming, melting of half-product, cooling of obtained ingot, its standing at certain temperature and further cooling to room temperature; polycrystal half-product is loaded into crucible together with pure cadmium sample, whose weight is determined by Clapeyron-Mendeleev equation, crucible is exhausted to pressure 10^-6-10^-7 mm of mercury, half-product is melted, ensuring temperature gradient on height 1-5°C/cm, half-product melt is stood at melting temperature during 2-4 hours, then half-product is cooled at rate 0.5-1,0°C/hour to full crystallization; obtained crystal is cooled at rate 40-60°C/hour to temperature 920-960°C, crystal is stood at said temperature during 8-12 hours, then it is cooled again at rate 40-60°C/hour to temperature 820-860°C and stood at during 8-12 hours, then crystal is cooled to temperature 700-720°C and stood during 8-12 hours, after which crystal is cooled at rate 10-20°C/hour to room temperature and removed from crucible as end-product.

EFFECT: high perfection of microstructure and high optical characteristics.

1 ex, 2 dwg