FIELD: electricity.
SUBSTANCE: method is carried out by method of vertically directed crystallization in quartz ampoule with internal coating from alternating layers α-SiO2 and α-SiO1.5:Cn, where n=1.0÷4.0, in bottom part of ampoule there is hole arranged with diametre of 3-5 mm by all height of coating layer, and quartz bottom surface of ampoule without coating is preliminarily activated with hydrofluoric acid.
EFFECT: improved yield of single-crystal part in ingots.
4 cl, 7 ex, 1 tbl
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