METHOD FOR GROWING HIGH-TEMPERATURE MONOCRYSTALS BY SINELNIKOV-DZIOV'S METHOD Russian patent published in 2017 - IPC C30B15/34 C30B15/04 C30B17/00 C30B29/16 C30B29/18 C30B29/26 G02B1/02 H01S3/16 A44C17/00 

FIELD: chemistry.

SUBSTANCE: method involves melting the initial charge in the crucible and the subsequent growth of the single crystal with a seed while cooling the melt and then cooling the grown single crystal, while the crucible is made of a refractory material with a melting point above 2300°C the formulator with convection in the bottom and discharge in the side parts of the slits, the polycrystalline material or polycrystal obtained by melting in a cold crucible or fragments of a single crystal of the corresponding oxide is used as the initial charge, and the growth of single crystals is carried out at a rate from 0.5 to 4 mm/H.

EFFECT: improving the quality of grown single crystals, the variety of forms obtained while reducing material and time costs, the possibility of growing single crystals both doped and without impurities.

16 cl, 9 ex