FIELD: nanotechnologies.
SUBSTANCE: invention is related to micro- and nanoelectromechanical devices and to method of their manufacture. In one of invention realisation versions production of nanoelectromechanical structure is based on mechanisms of self-organisation and self-alignment, as a result, its significant geometric parameters are not limited by resources of traditional photolithography. This fact helps to achieve integration extent of up to 1016 m-2 and higher. Besides, in one of invention aspects, resonance frequency is used as independent coordinate of elements addressing, which makes it possible to reduce density of required interconnections. In other aspect of invention, gas detector is provided, which possesses high sensitivity of certain gases or particles measurement in atmosphere, universal and flexible mechanisms of selectivity, controlled process of sensor ability regeneration process.
EFFECT: invention makes it possible to increase extent of integration and frequency of operation, to reduce fluctuations of element parameters, to increase their time and radiation stability, to increase sensitivity and selectivity to physical and chemical effects, and also to reduce prime cost of produced systems.
28 cl, 7 dwg
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Authors
Dates
2009-03-20—Published
2007-06-22—Filed